Top-Gated Chemical Vapor Deposition Grown Graphene Transistors with Current Saturation
نویسندگان
چکیده
منابع مشابه
Current saturation in zero-bandgap, top-gated graphene field-effect transistors.
The novel electronic properties of graphene, including a linear energy dispersion relation and purely two-dimensional structure, have led to intense research into possible applications of this material in nanoscale devices. Here we report the first observation of saturating transistor characteristics in a graphene field-effect transistor. The saturation velocity depends on the charge-carrier co...
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TING FUNG CHUNG∗,‡, TIAN SHEN∗, HELIN CAO∗,‡, LUIS A. JAUREGUI†,‡, WEI WU§, QINGKAI YU¶, DAVID NEWELL‖ and YONG P. CHEN∗,†,‡,∗∗ ∗Department of Physics, West Lafayette, Indiana 47907, USA †School of Electrical and Computer Engineering, West Lafayette, Indiana 47907, USA ‡Birck Nanotechnology Center, Purdue University, West Lafayette, Indiana 47907, USA §Department of Electrical and Computer Engi...
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The scientific literature on grain boundaries (GBs) in graphene was reviewed. The review focuses mainly on the experimental findings on graphene grown by chemical vapor deposition (CVD) under a very wide range of experimental conditions (temperature, pressure hydrogen/hydrocarbon ratio, gas flow velocity and substrates). Differences were found in the GBs depending on the origin of graphene: in ...
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Current-perpendicular-to-plane (CPP) magnetoresistance (MR) effects are often exploited in various state-of-the-art magnetic field sensing and data storage technologies. Most of the CPP-MR devices are artificial layered structures of ferromagnets and non-magnets, and in these devices, MR manifests, due to spin-dependent carrier transmission through the constituent layers. In this work, we explo...
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Centre Of Super-Diamond and Advanced Films (COSDAF), Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China Department of Physics and Materials Science, City University of Hong Kong, Hong Kong SAR, China c Functional Nano & Soft Materials Laboratory (FUNSOM), Soochow University, Suzhou, Jiangsu 215123, China d Laboratory of Optoelectronic Functional Mate...
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ژورنال
عنوان ژورنال: Nano Letters
سال: 2011
ISSN: 1530-6984,1530-6992
DOI: 10.1021/nl201331x